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        to-251 -3l  plastic-encapsulate  transistors   2sd2118  75$16,6725 131  features z  /rz9 &( vdw 9 ce(sat) = 0.25v (typ.)(i c /i b = 4a / 0.1a) z  ([fhoohqw'&&xuuhqw*dlq&kdudfwhulvwlfv maximum ratings (t a =25 unless otherwise noted) symbol  par dphwhu  value unit v cbo &roohfwru%dvh9rowdjh  9 v ceo &roohfwru(plwwhu9rowdjh  9 v ebo (plwwhu%dvh9rowdjh  9 i c &roohfwru&xuuhqw&rqwlqxrxv  $ p c &roohfwru3rzhu'lvvlsdwlrq  : t j -xqfwlrq7hpshudwxuh  t stg 6wrudjh7hpshudwxuh    electrical chara cteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage 9 %5 &%2 , & ?$, (     9 collector-emitter breakdown voltage 9 %5 &(2 , &  p$, %     9 emitter-base breakdown voltage 9 %5 (%2 , ( ?$, &     9 collector cut-off current , &%2 9 &% 9, (     ?$ emitter cut-off current , (%2 9 (% 9, &     ?$ dc current gain k )( 9 &( 9, & $     collector-emitter saturation voltage 9 &( vdw , & $, % p$    9 transition frequency i 7 9 &( 9, & p$i 0+]    0+] collector output capacitance & re 9 &% 9, ( i 0+]   s) classific ation ri h fe rank 4 5 range               to-251 -3l   %$6(  &2//(&725  (0,77(5  1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,sep,2013


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